| PART |
Description |
Maker |
| JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| MA4X746 |
Silicon epitaxial planar type 0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SSM5H01TU-14 |
Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MA2C346 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2C188 MA188 |
Silicon epitaxial planar type 0.2 A, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode
Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| KDS112V |
SILICON EPITAXIAL TYPE DIODE
|
KEC(Korea Electronics)
|
| 1SV172 |
Diode Silicon Epitaxial Pin Type
|
TOSHIBA
|
| KDV142V-15 |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
| KDV142EL07 |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
